Compound Semiconductor Week 2016 will begin on Sunday, June 26, with two short courses presented by renowned experts.
June 26 (Sun), 14:00–15:30
Short course A:
Manipulation of Photons by Photonic Crystals
Susumu Noda, Kyoto University, Japan
In this short course, I will review the recent progresses in photonic crystal research, which includes (1) ultrahigh-Q nanocavities and their applications, (3) broad-area photonic-crystal cavities and their applications to high-power coherent lasers, and (3) thermal-emission control based on control of photonic and electronic states. Through such a broad-range of progresses, I hope that the audience could feel that photonic crystal research is now approaching to a goal towards "ultimate control of photons".
June 26 (Sun), 16:00–17:30
Short course B:
New Perspectives for Oxide Semiconductors and Their Applications
- Tuning The Electronic Properties of Oxide-Semiconductor Heterostructures -
Akira Ohtomo, Tokyo Institute of Technology, Japan
In this lecture, a review on most intensively studied oxide semiconductors will be given with emphasis on the growth of heterostructures and the physical properties. ZnO has outstanding optical and electronic properties, such as large exciton-binding energy, excellent luminescent properties, high electron mobility, piezoelectricity, and a direct wide bandgap. All of these features and the relatively easy growth of the nanostructures have spurred the investigation of these materials for a large scope of photonics and electronics applications, including light-emitting diodes (LEDs), photodetectors, and transparent field-effect transistors. As for perovskite oxides, high-mobility two-dimensional electron gas and superconductivity can be created in SrTiO3 based heterostructures, allowing us to explore the quantum transport in a novel class of superconducting semiconductors.
- Current Status and Future Prospects of Gallium Oxide Technologies -
Masataka Higashiwaki, National Institute of Information and Communications Technology, Japan
Gallium oxide (Ga2O3) possesses excellent material properties especially for power device applications. It is also attractive from an industrial viewpoint since large-size, high-quality wafers can be manufactured by using simple methods. These two features have drawn much attention to Ga2O3 as a new wide bandgap semiconductor following SiC and GaN. This lecture will discuss the recent progress in development on fundamental technologies for Ga2O3 devices, covering wafer production from melt-grown bulk single crystals, homoepitaxial thin-film growth by molecular beam epitaxy and halide vapor phase epitaxy, as well as device processing and characterization of metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes.