Plenary and Invited Speakers

Plenary Speakers

Hiroshi Amano, Nagoya University, Japan
GaN as A Key Material for Realizing Internet of Energy

Erik Bakkers, Eindhoven University of Technology, The Netherlands
Bottom-Up Grown Nanowire Quantum Devices

Raymond G. Beausoleil, Hewlett Packard Enterprise, USA
Large-Scale Integrated Photonics for Accelerated Communication and Computing

James Harris, Stanford University, USA
Materials and Device Challenges for Next Generation LIDARS

Zakaria Y. Al Balushi, University of California, Berkeley, USA
Graphene Stabilized Two-Dimensional Crystals
D. Scott Katzer, Naval Research Laboratory, USA
Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications
Roger Loo, IMEC Interuniversity Microelectronics Centre, Belgium
Epitaxial Growth of (Si)GeSn Source/Drain Layers for Advanced Ge Gate All Around Devices
Katsunori Makihara, Nagoya University, Japan
Formation and Characterization of Si Quantum Dots with Ge Core for Electroluminescent Devices
Zetian Mi, The University of Michigan, USA
III-Nitride Nanocrystals: From Low Threshold Ultraviolet Laser Diodes to High Efficiency Artificial Photosynthesis

Edward Yi Chang, National Chiao Tung University, Taiwan
High-Performance In_0.53Ga_0.47As FinFETs for Logic and RF Applications
Arnulf Leuther, Fraunhofer Institute for Applied Solid State Physics IAF, Germany
THz Frequency HEMTs: Future Trends and Applications
Hiroshi Yamamoto, Sumitomo Electric Industries, LTD., Japan
GaN HEMT Characterization for Base Stations

Thomas Detzel, Infineon Technologies, Austria
The Commercialization of GaN Power Devices: Value Proposition, Manufacturing, and Reliability
Masahiko Kuraguchi, Toshiba, Japan
Improvement of Channel Mobility and Reliability in GaN-MOSFETs
Luca Nela, École Polytechnique Fédéral de Lausanne (EPFL) , Switzerland
High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs

Brian Corbett, Tyndall National Institute, Ireland
Transfer Printing of III-V Devices for Silicon Photonics
Yuqing Jiao, Eindhoven University of Technology, The Neterlands
InP Membrane Lasers and Active-Passive Integration
Hidenori Mizuno, National Institute of Advanced Industrial Science and Technology, Japan
Smart Stack Technology for III-V/Si Multi-Junction Solar Cells
Masahiro Nada, NTT, Japan
High-speed Avalanche Photodiodes Based on III-V Compounds for Optical Communications
Kazuhiko Naoe, Device Development Center, Lumentum, Japan
Uncooled 53-Gbaud PAM4 Operation of EA/DFB and Directly Modulated DFB Laser for 400GbE Applications
Minh Tran, University of California, Santa Barbara, USA
Ultra-low Noise Widely-Tunable Semiconductor Lasers Fully Integrated on Silicon
Siyuan Yu, University of Bristol, UK
Multi-Wavelength DFB Laser Array in InAs/GaAs Quantum Dot Material Epitaxially Grown on Silicon

Deep Jariwala, University of Pennsylvania, USA
Atomically-Thin Photovoltaics: Progress, Promise and Interface Physics
Takashi Nakajima, RIKEN, Japan
Coherent Control of a GaAs Quantum Dot Spin Qubit Operated in a Feedback Loop
Fabrizio Nichele, IBM Zurich Research Laboratory, Switzerland
Superconductor/Semiconductor Devices for Majorana Zero Modes
Gian Salis, IBM Zurich Research Laboratory, Switzerland
Universal Nuclear Focusing of Confined Electron Spins

Antonio Hurtado, University of Strathclyde, UK
Nanoscale Transfer Printing for the Heterogeneous Integration of Semiconductor Nanowire Lasers
Fangfang Ren, Nanjing University, China
Low-threshold Vertical Lasing from InP Nanowire Embedded in Cat’s Eye Antenna
Jesper Wallentin, Lund University, Sweden
Characterization of Nanowire Devices Using Nano-Focused X-Ray Beams

Srabanti Chowdhury, Stanford University, USA
Processing of GaN Vertical Devices: Static Induction Transistors
Tamotsu Hashizume, Hokkaido University, Japan
MOS Interface Control for GaN Power Transistors
Tomasz Sochacki, Institute of High Pressure Physics Polish Academy of Sciences, Poland
GaN Substrates of The Highest Structural Quality
Akira Uedono, University of Tsukuba, Japan
Vacancy-Type Defects in GaN-Based Power Device Structure – Defect Characterization in Ion Implanted GaN and Al₂O₃/GaN –

Elżbieta Guziewicz, Institute of Physics, Polish Academy of Sciences, Poland
Zinc Oxide Grown by ALD – from Heavily N-Type to P-Type Material
Farida Selim, Bowling Green State University, USA
Hydrogen in Semiconducting Oxides
Atsushi Tsukazaki, Tohoku University, Japan
Interface Engineering of Sn-Based Oxide Semiconductors

Tomoki Machida, The University of Tokyo, Japan
Mid-Infrared Photoresponse and Robotic Fabrication of Graphene/h-BN van der Waals Heterostructures
Masaki Nakano, The University of Tokyo, Japan
Emergent Transport Phenomena in MBE-Grown 2D Materials and Their Heterostructures

Hiroaki Iino, Tokyo Institute of Technology, Japan
Liquid Crystals as Polycrystalline Materials for Organic Thin Film Transistors
Takafumi Uemura, Osaka University, Japan
Ultraflexible Biosignal Amplifier Based on Organic Thin-Film Transistors

Gregg H. Jessen, Air Force Research Laboratory, USA
Pulsed RF Power Measurements of Laterally Scaled Ga₂O₃ FETs
Yuichi Oshima, National Institute for Materials Science, Japan
Halide Vapor Phase Epitaxy of α-Ga₂O₃
Man Hoi Wong, National Institute of Information and Communications Technology, Japan
β-Ga₂O₃ MOSFETs with Nitrogen-Ion-Implanted Back-Barrier: DC Performance and Trapping Effects
Huili Grace Xing, Cornell University, USA
Ga₂O₃ Power Schottky Barrier Diodes and Transistors: Design Principles and Experimental Validation

Julien Barjon, University of Versailles Saint-Quentin, France
Luminescence Efficiency of Hexagonal Boron Nitride
Lee Bassett, University of Pennsylvania, USA
Spin-Dependent Quantum Emission from Defects in Hexagonal Boron Nitride
James Edgar, Kansas State University, USA
Atmospheric Pressure Solution Growth of Monoisotopic Hexagonal Boron Nitride
Sergei Novikov, University of Nottingham, UK
High-Temperature Plasma-Assisted Molecular Beam Epitaxy of hBN Layers
Kenji Watanabe, National Institute for Materials Science, Japan
Observation of Impurity Incorporated Domain in h-BN Single Crystals