Committee – CSW2019

CSW Steering Committee

General Affair: Satoshi Iwamoto(Univ. Tokyo) Chair; Nobuhiko Nishiyama(Tokyo Tech) Vice-chair; Masahiro Nomura(Univ. Tokyo); Koji Takeda(NTT)

Local Arrangement: Takashi Kita(Kobe Univ.) Chair; Kenichi Yamashita(Kyoto Inst. of Tech); Yuki Matsuoka(Nara Women’s Univ.); Nobuhiko Ozaki(Wakayama Univ.); Jun Tatebayashi(Osaka Univ.); Toshiyuki Kaizu(Kobe Univ.)

Program Co-chair: Masaaki Tanaka(Univ. Tokyo); Masakazu Sugiyama(Univ. Tokyo)

CSW Program Subcommittees
A: Epitaxy, fabrication, and related technologies: Takashi Suemasu(Univ. Tsukuba) Chair; Ming-Hwei Hong(National Taiwan Univ., Taiwan) Vice-chair; Masamitsu Takahashi(QST); Takahiro Nagata(NIMS); Fumitaro Ishikawa(Ehime Univ.); Yohsuke Shimura(Shizuoka Univ.); Diana Huffaker(Cardiff Univ., UK)

B: RF electron devices: Tetsuya Suemitsu(Tohoku Univ.) Chair; Martin Dvorak(Keysight, USA) Vice-chair; Gerry Mei(Northrop Grumman, USA); Miguel Urteaga(Teledyne, USA); Issei Watanabe(NICT); Nils Weimann(Univ. of Duisburg-Essen, Germany); Lars-Erik Wernersson(Lund Univ., Sweden)

C: High power electron devices: Masaaki Kuzuhara(Fukui Univ.) Chair; Srabanti Chowdhury(UC Davis, USA) Vice-chair; Toshi-kazu Suzuki(JAIST); Tsuyoshi Tanaka(Panasonic); Kunio Tsuda(Toshiba); Akio Wakejima(Nagoya Institute of Technology); Jan Kuzmik(Slovak Academy of Science, Slovakia); Edward Yi Chang(NCTU, Taiwan)

D: Photonic devices and related technologies: Mitsuru Takenaka(Univ. Tokyo) Chair; Johann Peter Reithmaier(Universität Kassel, Germany) Vice-chair; Hideki Yagi(Sumitomo Electric) Vice-chair; Yasumasa Kawakita(Furukawa Electric); Naoki Fujiwara(NTT); Takashi Asano(Kyoto Univ.); Di Liang(HP, USA); Patrick Runge(HHI, Germany); Mike Larson(Lumentum, USA); Kevin Williams(Tu/e, The Netherlands); Takeyoshi Sugaya(AIST); Sang-Hyeon Kim(KAIST, Korea)

E: Physics, spintronics, and novel device concepts: Koji Ishibashi(RIKEN) Chair; Tse-Ming Chen(National Cheng Kung Univ., Taiwan) Vice-chair; Akira Oiwa(Osaka Univ.); Junichi Motohisa(Hokkaido Univ.); Makoto Kohda(Tohoku Univ.); Junko Hayase(Keio Univ.); Minoru Kawamura(RIKEN); Shaoyun Huang(Peking Univ., China); Thomas Schaepers(Forschungszentrum Juelich GmbH, Germany); Berry Jonker(U.S. Naval Research Lab., USA)

F: Nanocharacterization and nanostructures: Kenichi Kawaguchi(Fujitsu) Chair; H. Hoe Tan(Australian National Univ., Australia) Vice-chair; Shinjiro Hara(Hokkaido Univ.); Kerstin Volz(Philipps-Univ. Marburg, Germany); Takuo Sasaki(QST); Ryo Tamaki(Univ. of Tokyo)

G: GaN and related semiconductors: Tetsu Kachi(Nagoya Univ.) Chair; Michał Boćkowski(Inst. High Pressure Physics Polish Academy of Sciences, Poland) Vice-chair; Martin Kuball(Univ. of Bristol, UK); Jingshan Wang(Micron Technology, USA); Fumimasa Horikiri(SIOCS); Daigo Kikuta(Toyota Central R&D labs)

H: Oxide semiconductors: Shizuo Fujita(Kyoto Univ.) Chair; Chih-Chung Yang(National Taiwan Univ., Taiwan) Vice-chair; Martin Allen(Univ. of Canterbury, New Zealand); Norifumi Fujimura(Osaka Pref. Univ.); Kazunobu Kojima(Tohoku Univ.); Hidekazu Tanaka(Osaka Univ.)

I: Nanocarbon and novel 2D materials: Kazuhiko Matsumoto(Osaka Univ.) Chair; David Janes(Purdue Univ., USA) Vice-chair; Yutaka Ohno(Nagoya Univ.); Seiji Akita(Osaka Prefecture Univ.); Kazunari Matsuda(Kyoto Univ.); Kosuke Nagashio(Univ. of Tokyo); Shintaro Sato(Fujitsu Lab.); Taiichi Otsuji(Tohoku Univ.); Kenzo Maehashi(Tokyo Univ. of Agriculture and Technology); Yasuhide Ohno(Tokushima Univ.); Toshiro Kaneko(Tohoku Univ.)

J: Organic semiconductors and flexible materials: Masatoshi Kitamura(Kobe Univ.) Chair; Seunghyup Yoo(KAIST, Korea) Vice-chair; Takaaki Manaka(Tokyo Institute of Technology); Masakazu Nakamura(NAIST); Hirotake Kajii(Osaka Univ.); Takashi Nagase(Osaka Pref. Univ.)

SS1: (Special session) Gallium oxide: materials and devices: Masataka Higashiwaki(NICT) Chair; Siddharth Rajan(Ohio State Univ., USA) Vice-chair; Yoshinao Kumagai(Tokyo Univ. of Agriculture and Technology); Takeyoshi Onuma(Kogakuin Univ.); Zbigniew Galazka(Leibniz Institute for Crystal Growth, Germany); Uttam Singisetti(Univ. at Buffalo, USA)

SS2: (Special session) Hexagonal boron nitride: Guillaume Cassabois(Montpellier Univ., France) Chair; Takashi Taniguchi(NIMS) Vice-chair; Igor Aharonovich(Univ. of Technology Sydney, Australia); Joshua Caldwell(Vanderbilt Univ., USA); Bernard Gil(CNRS-Montpellier Univ., France); Chris VAN DE WALLE(UCSB, USA)

ISCS International Steering Committee: Yasuhiko Arakawa(Univ. Tokyo, Japan) Chair; Colombo Bolognesi(ETH, Switzerland); James Coleman(Univ. Illinois at Urbana Champaign, USA); Shizuo Fujita(Kyoto Univ., Japan); Nicolas Grandjean(EPFL, Switzerland); James S. Harris(Stanford Univ., USA); Yoshiro Hirayama(Tohoku Univ., Japan); Diana Huffaker(UCLA, USA); H.S. Jeon(Seoul National Univ., South Korea); Umesh Mishra(UCSB, USA); Henning Riechert(Paul Drude Inst., Germany); Tom Tiedje(Univ. British Columbia, Canada); Eric Tournie(Univ. Montpellier, France); Martin Walther(Fraunhofer-Inst., Germany); Hiroshi Yamaguchi(NTT, Japan)

IPRM International Steering Committee: Tomas Palacios(MIT, USA) Chair; Shigehisa Arai(Tokyo Tech, Japan); Hajime Asahi(Osaka Univ., Japan); Sophie Bouchoule(CNRS-LPN, France); Takatomo Enoki(NTT, Japan); Norbert Grote(Fraunhofer HHI, Germany); Sebastian Lourdudoss(Royal Institute of Technology, Sweden); Yuichi Matsushima(Waseda Univ., Japan); Yasuyuki Miyamoto(Tokyo Tech, Japan); Yoshiaki Nakano(Univ. Tokyo, Japan); Abderrahim Ramdane(CNRS-LPN, France); Mark Rodwell(UCSB, USA); Andre Scavennec(Alcatel Thales III-V Lab, France); Osamu Wada(Kobe Univ., Japan)