Kumamoto Castle
Kumamoto Castle
Kumamoto Castle
Kumamoto Castle

Plenary and Invited Speakers

Speaker information will be updated as it becomes available.


Plenary Speakers

  • Plenary Kimoto
    Tsunenobu Kimoto Kyoto Univ., Japan
    Crossing the Chasm: SiC Semiconductor Technology in the Era of Transformation
  • Plenary Xing
    Hajime Shoji Sumitomo Electric, Japan
    Driving the evolution of connected world with compound semiconducutor devices
  • Plenary Xing
    Huili Grace Xing Cornell Univ., USA
    Introducing AlN XHEMT - a New Kid on the Block
  • Lars Zimmermann
    Lars Zimmermann IHP GmbH/Technische Universität Berlin, Germany
    Silicon germanium photonics – a fresh view on electronic photonic convergence

Invited Speakers

Scope A: Epitaxy and process technologies
  • • Erik Bakkers Eindhoven Univ. of Technology, Netherlands
    Epitaxy of Direct Band Gap Hexagonal SiGe
  • • Davide Colucci imec, Belgium
    New laser device concepts in Silicon photonics enabled by Nano-Ridge Engineering
  • • Yu Han Sun Yet-San Univ., China
    Monolithic Integration of III-V Lasers on SOI using Selective Lateral Heteroepitaxy
  • • Di Liang Univ. of Michigan, USA
    Electrically-Driven Ultraviolet Distributed Feedback Lasers
  • • Huiyun Liu Univ. College London, UK
    InAs/InAlGaAs quantum dot laser on InP and Si substrates
  • • Shinya Yamada Osaka Univ., Japan
    Epitaxial half-metallic Heusler alloy/III-V compound semiconductor heterostructures for semiconductor spintronic devices
    • Scope B: RF and THz devices
    • • Teruo Jyo NTT, Japan
      Wideband 300-GHz InP DHBT Power Amplifier Achieving 280-Gb/s Signal Generation with Digital Predistortion
    • • Viktor Krozer Goethe Universität Frankfurt/Main / Ferdinand-Braun-Institut, Germany
      Towards Terahertz Bandwidth Heterogeneous Integration of Semiconductor Technologies
    • • Keigo Nakatani Mitsubishi Electric, Japan
      A W-band 1 W-class GaN MMIC Power Amplifier for Beyond 5G
    • • Junya Yaita Sumitomo Electric Industries, Ltd., Japan
      Experimental Verification of the Advantages of N-polarGaN HEMTs Compared to Ga-polar HEMTs
    Scope C: Power devices
    • • Andrew Binder Sandia, USA
      Advances and Integration Strategies for High-k Gate Dielectrics in GaN and SiC Power Devices
    • • Masahiro Horita Nagoya Univ., Japan
      Study on intrinsic point defects in GaN formed by electron beam irradiation
    • • Motoki Kobayashi Sumitomo Metal Mining, Japan
      4H-SiC bonded substrate “SiCkrest™” and its application to power devices
    • • Julien Pernot Université Grenoble Alpes, France
      Recent progress of diamond field effect transistor
    • • Akio Takatsuka Novel Crystal Technology, Japan
      Recent Progress of β-Ga2O3 Trench Implemented Vertical Schottky Diodes
    Scope D: Photonic devices and related technologies
    • • Xin Chen Huawei Technologies R&D, Ltd, China
    • • Paul Crump Ferdinand-Braun-Institut, Germany
      High-power diode lasers for fusion energy applications: perspectives from research and industry
    • • Nikolaos-Padeleimon Diamantopoulos NTT, Japan
      High-Speed, Low-Energy Membrane Feedback Lasers for AI Applications
    • • Tatsushi Hamaguchi Kyushu Univ., Japan
    • • Akihiko Kikuchi Sophia Univ., Japan
    • • Naoya Morioka Kyoto Univ., Japan
      Photoelectrical Readout and Characterization of Defect Spins in Silicon Carbide for Quantum Applications
    • • Kunal Mukherjee Stanford Univ., USA
    • • Szymon Stanczyk Institute of High Pressure Physics of the Polish Academy of Sciences, Poland
      Recent Progress and Novel Approaches of InGaN Laser Diodes and Superluminescent Diodes
    • • Kenichi Tanigawa Oki Electric Industry Co., Ltd., Japan
    Scope E: Physics, spintronics, and novel device concepts
    • • Marc Bescond CNRS, France Cooling at the Nanoscale with Quantum Heterostructures
      Cooling at the Nanoscale with Quantum Heterostructures
    • • Makoto Kohda Tohoku Univ., Japan
      Control of Spin Helix in Semiconductor heterostructures -Towards Multiplexed and Parallel information processing-
    • • Takao Mori CNIMS, Japan
      Utilizing defect engineering and magnetism to realise high performance thermoelectric materials & devices
    • • Jorge Puebla Kyoto Univ., Japan
      Strong magnon-phonon coupling and nonlinear magnetoelastic waves excitations
    • • Haidong Wang Tsinghua Univ., China
    Scope F: Low dimensional materials and structures
    • • Sanghoon Chae Nanyang Technological Univ., Singapore
      Electrically Tunable Nonlinear Optic Response in Ferroelectric NbOBr2 Integrated Photonics
    • • Moon-Ho Jo Pohang Univ. of Science and Technology (POSTECH), South Korea
    • • Chun-Liang Lin National Yang Ming Chiao Tung Univ. (NYCU), Taiwan
      Property at Interfaces of Contact Metals and Monolayer 2D Semiconductor
    • • Shinpei Ogawa Mitsubishi Electric Corp., Japan
      Graphene Image Sensors Based on Photogated Diodes
    • • Kento Sasaki The Univ. of Tokyo, Japan
      Detection and control of the spins in hexagonal boron nitride
    Scope G: Oxide materials and devices
    • • Zbigniew Galazka Section Oxides & Fluorides, Leibniz-Institut für Kristallzüchtung, Germany
      Bulk rutile-GeO2 single crystals, epi-ready wafers, and physical properties – a comparison with -Ga2O3 and -(AlxGa1-x)2O3 single crystals
    • • Junghwa Kim UNIST, South Korea
    • • Masaharu Kobayashi The Univ. of Tokyo, Japan
      4H-SiC bonded substrate “SiCkrest TM” and its application to power devices
    Scope H: Flexible materials
    • • Rachana Acharya Univ. of Cambridge, UK Organic transistors: From thin films to electrochemical to bioelectronic
      Organic transistors: From thin films to electrochemical to bioelectronic
    • • Jun Takeya The Univ. of Tokyo, Japan
    • • Wonryeol Yang Pohang Univ. of Science and Technology, South Korea
      Development of High-Performance P-type Semiconductors for Transistors